NTLJS3113PT1G
onsemi
onsemi
MOSFET P-CH 20V 3.5A 6WDFN
$0.62
Available to order
Reference Price (USD)
3,000+
$0.20801
6,000+
$0.19459
15,000+
$0.18117
30,000+
$0.17178
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTLJS3113PT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTLJS3113PT1G inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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