DMG3401LSNQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 30V 3A SC59-3
$0.19
Available to order
Reference Price (USD)
1+
$0.18720
500+
$0.185328
1000+
$0.183456
1500+
$0.181584
2000+
$0.179712
2500+
$0.17784
Exquisite packaging
Discount
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Discover DMG3401LSNQ-13, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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