IPSA70R1K4P7SAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 4A TO251-3
$0.25
Available to order
Reference Price (USD)
1+
$0.74000
10+
$0.62500
100+
$0.46890
500+
$0.34388
1,000+
$0.26573
Exquisite packaging
Discount
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IPSA70R1K4P7SAKMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPSA70R1K4P7SAKMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 22.7W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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