NTHD4P02FT1G
onsemi
onsemi
MOSFET P-CH 20V 2.2A CHIPFET
$0.31
Available to order
Reference Price (USD)
3,000+
$0.18380
6,000+
$0.17194
15,000+
$0.16008
30,000+
$0.15178
Exquisite packaging
Discount
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Discover high-performance NTHD4P02FT1G from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NTHD4P02FT1G delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.1W (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET™
- Package / Case: 8-SMD, Flat Lead
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