SQ2398ES-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 1.6A SOT23-3
$0.66
Available to order
Reference Price (USD)
3,000+
$0.23826
6,000+
$0.22374
15,000+
$0.20922
30,000+
$0.19906
Exquisite packaging
Discount
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Enhance your circuit performance with SQ2398ES-T1_GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SQ2398ES-T1_GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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