BSC0804LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 40A TDSON-8-6
$2.17
Available to order
Reference Price (USD)
1+
$2.17000
500+
$2.1483
1000+
$2.1266
1500+
$2.1049
2000+
$2.0832
2500+
$2.0615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BSC0804LSATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NVMFS5C466NT1G
EPC
EPC2218
IXYS
IXFA90N20X3
Microchip Technology
APT34N80B2C3G
Infineon Technologies
IPD053N08N3GATMA1
IXYS
IXTP14N60PM
Nexperia USA Inc.
PMPB15XPZ
Renesas Electronics America Inc
RJK03M5DNS-00#J5
Vishay Siliconix
SI4894BDY-T1-E3
Nexperia USA Inc.