NTH4L045N065SC1
onsemi
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
$16.52
Available to order
Reference Price (USD)
1+
$16.52000
500+
$16.3548
1000+
$16.1896
1500+
$16.0244
2000+
$15.8592
2500+
$15.694
Exquisite packaging
Discount
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Upgrade your electronic designs with NTH4L045N065SC1 by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NTH4L045N065SC1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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