NTBG020N090SC1
onsemi
onsemi
SICFET N-CH 900V 9.8A/112A D2PAK
$32.60
Available to order
Reference Price (USD)
1+
$32.60000
500+
$32.274
1000+
$31.948
1500+
$31.622
2000+
$31.296
2500+
$30.97
Exquisite packaging
Discount
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Experience the power of NTBG020N090SC1, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTBG020N090SC1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
- Vgs (Max): +19V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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