RQ6E060ATTCR
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 30V 6A TSMT6
$0.83
Available to order
Reference Price (USD)
1+
$0.83000
500+
$0.8217
1000+
$0.8134
1500+
$0.8051
2000+
$0.7968
2500+
$0.7885
Exquisite packaging
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Discover RQ6E060ATTCR, a versatile Transistors - FETs, MOSFETs - Single solution from Rohm Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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