CSD17579Q3AT
Texas Instruments
Texas Instruments
MOSFET N-CH 30V 20A 8VSON
$1.28
Available to order
Reference Price (USD)
1+
$1.28000
500+
$1.2672
1000+
$1.2544
1500+
$1.2416
2000+
$1.2288
2500+
$1.216
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose CSD17579Q3AT by Texas Instruments. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with CSD17579Q3AT inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSONP (3x3.3)
- Package / Case: 8-PowerVDFN
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