NSVMUN5116T1G-M02
onsemi
onsemi
NSVMUN5116 - DIGITAL BJT PNP - P
$0.04
Available to order
Reference Price (USD)
1+
$0.03640
500+
$0.036036
1000+
$0.035672
1500+
$0.035308
2000+
$0.034944
2500+
$0.03458
Exquisite packaging
Discount
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The NSVMUN5116T1G-M02 by onsemi is a high-performance solution in the Discrete Semiconductor Products sector. These Transistors - Bipolar (BJT) - Single, Pre-Biased are crafted for excellence, featuring high efficiency, low thermal resistance, and long lifespan. Perfect for use in power converters, lighting systems, and communication devices. onsemi guarantees superior products and support. Get in touch today to explore our offerings!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70 (SOT323)
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