RN1314,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F USM TRANSISTOR PD 100MW F 2
$0.03
Available to order
Reference Price (USD)
1+
$0.03244
500+
$0.0321156
1000+
$0.0317912
1500+
$0.0314668
2000+
$0.0311424
2500+
$0.030818
Exquisite packaging
Discount
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Discover high-quality RN1314,LF from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for efficiency and reliability, making them ideal for various electronic applications. These transistors feature excellent performance, low power consumption, and robust construction. Perfect for amplification and switching circuits, they are widely used in consumer electronics, automotive systems, and industrial equipment. Trust Toshiba Semiconductor and Storage for superior semiconductor solutions. Contact us today for a quote or more information!
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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