GA4F3M(0)-T1-A
Renesas
Renesas
GA4F3M - BUILT-IN RESISTOR BIPOL
$0.08
Available to order
Reference Price (USD)
1+
$0.07769
500+
$0.0769131
1000+
$0.0761362
1500+
$0.0753593
2000+
$0.0745824
2500+
$0.0738055
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The GA4F3M(0)-T1-A by Renesas is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. Renesas ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2 kOhms
- Resistor - Emitter Base (R2): 2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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