9926
Goford Semiconductor
Goford Semiconductor
N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
$0.51
Available to order
Reference Price (USD)
1+
$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Goford Semiconductor presents 9926, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, 9926 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Diodes Incorporated
DMN2055UWQ-7
Diodes Incorporated
DMN6069SFGQ-13
Goford Semiconductor
G16P03S
Vishay Siliconix
IRLR110TRPBF-BE3
onsemi
NTMFSC011N08M7
Diodes Incorporated
DMT10H9M9SH3
Infineon Technologies
IRL8114PBF
Diodes Incorporated
DMN10H120SFG-13
Renesas Electronics America Inc
2SK1399-T2B-A
onsemi