MS1003
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 18V 175MHZ M111
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Engineered for excellence, Microsemi Corporation's MS1003 transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 136MHz ~ 175MHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB
- Power - Max: 270W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: M111
- Supplier Device Package: M111
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