MS2473
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1.09GHZ M112
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Upgrade your RF designs with Microsemi Corporation's MS2473 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MS2473 can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB
- Power - Max: 2300W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V
- Current - Collector (Ic) (Max): 46A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M112
- Supplier Device Package: M112
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