MS2212
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 55V 1.215GHZ M222
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microsemi Corporation's MS2212 RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.1dB ~ 8.9dB
- Power - Max: 50W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
- Current - Collector (Ic) (Max): 1.8A
- Operating Temperature: 250°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M222
- Supplier Device Package: M222
Related Products
CEL
NE685M03-T1-A
Microsemi Corporation
0105-50
Microsemi Corporation
BFR92ALT1
Microsemi Corporation
MS2209
Microsemi Corporation
MS2092H
Microsemi Corporation
JTDB75
Broadcom Limited
AT-41486-BLK
Microsemi Corporation
MSC1175MA
Microsemi Corporation
SD1536-01
Microsemi Corporation