MRF7S19170HR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.99GHZ NI-880
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Discover high-performance MRF7S19170HR3 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 17.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 50W
- Voltage - Rated: 65 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-880H-2L
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