MRF6VP2600HR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 110V 225MHZ NI1230
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Upgrade your RF designs with NXP USA Inc.'s MRF6VP2600HR6 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 225MHz
- Gain: 25dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 2.6 A
- Power - Output: 125W
- Voltage - Rated: 110 V
- Package / Case: NI-1230
- Supplier Device Package: NI-1230
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