MRF8S23120HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.3GHZ NI-780S
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Engineered for excellence, NXP USA Inc.'s MRF8S23120HSR3 RF MOSFETs offer best-in-class power density and thermal resistance. Ideal for amateur radio and test instrumentation, these transistors minimize signal loss while maximizing output. Backed by rigorous quality testing. Start your procurement process inquire today about bulk order discounts!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.3GHz
- Gain: 16dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 28W
- Voltage - Rated: 65 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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