MMIX1X200N60B3
IXYS
IXYS
IGBT 600V 223A 625W SMPD
$38.71
Available to order
Reference Price (USD)
20+
$31.91550
Exquisite packaging
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Choose MMIX1X200N60B3 Single IGBTs by IXYS for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. IXYS's reputation for quality makes MMIX1X200N60B3 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 223 A
- Current - Collector Pulsed (Icm): 1000 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
- Power - Max: 625 W
- Switching Energy: 2.85mJ (on), 2.9mJ (off)
- Input Type: Standard
- Gate Charge: 315 nC
- Td (on/off) @ 25°C: 48ns/160ns
- Test Condition: 360V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-PowerSMD, 21 Leads
- Supplier Device Package: 24-SMPD