RGW00TS65HRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.85
Available to order
Reference Price (USD)
1+
$6.85000
500+
$6.7815
1000+
$6.713
1500+
$6.6445
2000+
$6.576
2500+
$6.5075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance RGW00TS65HRC11 Single IGBTs from Rohm Semiconductor, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, RGW00TS65HRC11 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 96 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 254 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 141 nC
- Td (on/off) @ 25°C: 48ns/186ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
Related Products
Infineon Technologies
IKWH50N65WR6XKSA1
IXYS
IXGT64N60B3-TRL
Infineon Technologies
SIGC100T60R3EX1SA1
IXYS
IXYY8N90C3-TRL
IXYS
IXXH140N65B4
Harris Corporation
HGTD8P50G1S
Renesas Electronics America Inc
RBN40H65T1FPQ-A0#CB0
IXYS
IXYH40N120C4
IXYS
IXGA20N250HV
Harris Corporation