RBN40H65T1FPQ-A0#CB0
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / IGBT
$5.48
Available to order
Reference Price (USD)
1+
$5.48000
500+
$5.4252
1000+
$5.3704
1500+
$5.3156
2000+
$5.2608
2500+
$5.206
Exquisite packaging
Discount
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Optimize power control with RBN40H65T1FPQ-A0#CB0 Single IGBTs from Renesas Electronics America Inc, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Renesas Electronics America Inc ensures RBN40H65T1FPQ-A0#CB0 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 185 W
- Switching Energy: 620µJ (on), 520µJ (off)
- Input Type: Standard
- Gate Charge: 28 nC
- Td (on/off) @ 25°C: 22ns/96ns
- Test Condition: 400V, 40A, 16Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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