IXYQ30N65B3D1
IXYS
IXYS
DISC IGBT XPT-GENX3 TO-3P (3)
$6.24
Available to order
Reference Price (USD)
1+
$6.23600
500+
$6.17364
1000+
$6.11128
1500+
$6.04892
2000+
$5.98656
2500+
$5.9242
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize energy efficiency with IXYQ30N65B3D1 Single IGBTs by IXYS, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose IXYQ30N65B3D1 for your next project and experience the IXYS difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 270 W
- Switching Energy: 830µJ (on), 640µJ (off)
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 17ns/87ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 38 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
Harris Corporation
HGTP10N50E1
Renesas Electronics America Inc
RJP43F4ADPP-90#T2F
Renesas Electronics America Inc
RJH65T04BDPM-A0#T2
onsemi
ISL9V3040P3-F085C
IXYS
MMIX1X200N60B3
onsemi
STK762-921G-E
Rohm Semiconductor
RGW00TS65HRC11
Infineon Technologies
IKWH50N65WR6XKSA1
IXYS
IXGT64N60B3-TRL
Infineon Technologies