RJH1CV7DPQ-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
RJH1CV7DPQ - IGBT 1200V 70A
$5.54
Available to order
Reference Price (USD)
1+
$5.54000
500+
$5.4846
1000+
$5.4292
1500+
$5.3738
2000+
$5.3184
2500+
$5.263
Exquisite packaging
Discount
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Maximize energy efficiency with RJH1CV7DPQ-E0#T2 Single IGBTs by Renesas Electronics America Inc, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose RJH1CV7DPQ-E0#T2 for your next project and experience the Renesas Electronics America Inc difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A
- Power - Max: 320 W
- Switching Energy: 3.2mJ (on), 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 166 nC
- Td (on/off) @ 25°C: 53ns/185ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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