SGB02N120ATMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 6.2A 62W TO263-3
$1.53
Available to order
Reference Price (USD)
1,000+
$1.00774
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SGB02N120ATMA1 Single IGBTs from Infineon Technologies, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, SGB02N120ATMA1 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 6.2 A
- Current - Collector Pulsed (Icm): 9.6 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
- Power - Max: 62 W
- Switching Energy: 220µJ
- Input Type: Standard
- Gate Charge: 11 nC
- Td (on/off) @ 25°C: 23ns/260ns
- Test Condition: 800V, 2A, 91Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
Related Products
onsemi
HGTG11N120CND
STMicroelectronics
STGW15H120DF2
STMicroelectronics
STGWT20V60DF
Rohm Semiconductor
RGTV00TK65GVC11
STMicroelectronics
STGB20NB41LZT4
Microchip Technology
APT50GT120LRG
onsemi
FGH40T65SHDF-F155
Fairchild Semiconductor
FGPF50N33BTTU
Fairchild Semiconductor
ISL9V3036D3ST
onsemi