IXTY8N65X2
IXYS
IXYS
MOSFET N-CH 650V 8A TO252
$2.92
Available to order
Reference Price (USD)
70+
$1.80000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXTY8N65X2, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXTY8N65X2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STU10NM60N
Toshiba Semiconductor and Storage
TPH6R004PL,LQ
Taiwan Semiconductor Corporation
TSM301K12CQ RFG
Micro Commercial Co
MCB130N10Y-TP
onsemi
MTD3302T4
Infineon Technologies
BSZ300N15NS5ATMA1
Taiwan Semiconductor Corporation
TSM4NB65CI C0G
Infineon Technologies
IPD65R225C7ATMA1
onsemi
FDB13AN06A0
Vishay Siliconix