STU10NM60N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 10A IPAK
$3.19
Available to order
Reference Price (USD)
3,000+
$1.34096
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with STU10NM60N, a reliable Transistors - FETs, MOSFETs - Single by STMicroelectronics. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, STU10NM60N meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Toshiba Semiconductor and Storage
TPH6R004PL,LQ
Taiwan Semiconductor Corporation
TSM301K12CQ RFG
Micro Commercial Co
MCB130N10Y-TP
onsemi
MTD3302T4
Infineon Technologies
BSZ300N15NS5ATMA1
Taiwan Semiconductor Corporation
TSM4NB65CI C0G
Infineon Technologies
IPD65R225C7ATMA1
onsemi
FDB13AN06A0
Vishay Siliconix
SIHF28N60EF-GE3
Toshiba Semiconductor and Storage