IXTX4N300P3HV
IXYS
IXYS
MOSFET N-CH 3000V 4A TO247PLUSHV
$74.94
Available to order
Reference Price (USD)
1+
$52.02000
30+
$45.90000
120+
$43.75800
Exquisite packaging
Discount
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Optimize your electronic systems with IXTX4N300P3HV, a high-quality Transistors - FETs, MOSFETs - Single from IXYS. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IXTX4N300P3HV provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 3000 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247PLUS-HV
- Package / Case: TO-247-3 Variant
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