PMCM4401VNEAZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 12V 4.7A 4WLCSP
$0.48
Available to order
Reference Price (USD)
9,000+
$0.13939
18,000+
$0.13155
27,000+
$0.12214
63,000+
$0.11822
Exquisite packaging
Discount
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PMCM4401VNEAZ by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PMCM4401VNEAZ ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-WLCSP (0.78x0.78)
- Package / Case: 4-XFBGA, WLCSP
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