IPZ40N04S5L2R8ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 40A 8TSDSON
$1.12
Available to order
Reference Price (USD)
5,000+
$0.62441
10,000+
$0.60093
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IPZ40N04S5L2R8ATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IRF1310NPBF
Fairchild Semiconductor
FDS7296N3
onsemi
FDD86540
Nexperia USA Inc.
PMCM4401VNEAZ
Alpha & Omega Semiconductor Inc.
AOB280L
Vishay Siliconix
SQJ486EP-T1_GE3
Diodes Incorporated
DMP3056L-7
Infineon Technologies
IPAN60R800CEXKSA1
Fairchild Semiconductor
HUF76113SK8
onsemi