IXTT16N20D2
IXYS
IXYS
MOSFET N-CH 200V 16A TO268
$12.89
Available to order
Reference Price (USD)
1+
$10.92000
10+
$9.82800
30+
$8.95433
120+
$8.08083
270+
$7.42559
510+
$6.77039
1,020+
$5.89680
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXTT16N20D2 by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTT16N20D2 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 695W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
NXP USA Inc.
BUK954R4-40B127
Toshiba Semiconductor and Storage
TK6A53D(STA4,Q,M)
Infineon Technologies
IPP139N08N3GXKSA1
Diodes Incorporated
DMN30H4D1S-7
Fairchild Semiconductor
FQB7N65CTM
Infineon Technologies
BSF134N10NJ3GXUMA1
Alpha & Omega Semiconductor Inc.
AOT360A70L
Renesas Electronics America Inc
RJK1028DSP-00#J5
Infineon Technologies
IPI50R399CPXKSA2
Infineon Technologies