BSZ086P03NS3EGATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 13.5A/40A TSDSON
$1.11
Available to order
Reference Price (USD)
5,000+
$0.33413
10,000+
$0.32175
25,000+
$0.31500
Exquisite packaging
Discount
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BSZ086P03NS3EGATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSZ086P03NS3EGATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 105µA
- Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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