IPI50R399CPXKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 9A TO262-3
$1.66
Available to order
Reference Price (USD)
500+
$1.19696
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPI50R399CPXKSA2, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPI50R399CPXKSA2 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Infineon Technologies
BSZ086P03NS3EGATMA1
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2102W-F2-0000HF
Infineon Technologies
IPP60R199CPXKSA1
Rectron USA
RM40N200TI
Infineon Technologies
IPB100N08S2L07ATMA1
Rohm Semiconductor
RQ3E180GNTB
Nexperia USA Inc.
PMPB215ENEAX
IXYS
IXTH1N250
Vishay Siliconix
SI9433BDY-T1-E3
Alpha & Omega Semiconductor Inc.