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IXTT16N10D2

IXYS
IXTT16N10D2 Preview
IXYS
MOSFET N-CH 100V 16A TO268
$14.06
Available to order
Reference Price (USD)
30+
$9.30700
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 830W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268AA
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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