R6050JNZ4C13
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 50A TO247G
$18.72
Available to order
Reference Price (USD)
1+
$18.72000
500+
$18.5328
1000+
$18.3456
1500+
$18.1584
2000+
$17.9712
2500+
$17.784
Exquisite packaging
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Discover high-performance R6050JNZ4C13 from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, R6050JNZ4C13 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 615W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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