IXTK170P10P
IXYS
IXYS
MOSFET P-CH 100V 170A TO264
$22.82
Available to order
Reference Price (USD)
1+
$15.62000
25+
$13.13520
100+
$12.07000
500+
$10.29500
1,000+
$9.94000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IXTK170P10P, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXTK170P10P meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
Related Products
onsemi
MTD6N20E1
Rohm Semiconductor
R6050JNZ4C13
Infineon Technologies
IRLH5034TRPBF
Renesas Electronics America Inc
NP179N055TUK-E1-AY
IXYS
IXFX80N60P3
onsemi
3LP01C-TB-E
onsemi
NTD5C668NLT4G
Microchip Technology
APT56M60B2
Rohm Semiconductor
RSR010N10HZGTL
onsemi