IXTT110N10L2
IXYS
IXYS
MOSFET N-CH 100V 110A TO268
$21.05
Available to order
Reference Price (USD)
1+
$14.41000
30+
$12.11767
120+
$11.13500
510+
$9.49751
1,020+
$9.17000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS presents IXTT110N10L2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXTT110N10L2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Rectron USA
RM150N100T2
Infineon Technologies
IRF3710PBF
Fairchild Semiconductor
FDU8586
Renesas Electronics America Inc
2SK3635-Z-E1-AZ
Nexperia USA Inc.
PSMN1R5-50YLHX
Infineon Technologies
IPD640N06LGBTMA1
Renesas Electronics America Inc
NP20P06SLG-E1-AY
Nexperia USA Inc.
PMN48XP,115
Texas Instruments
CSD18540Q5B
Nexperia USA Inc.