2SK3635-Z-E1-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 200V 8A TO252
$1.09
Available to order
Reference Price (USD)
1+
$1.09000
500+
$1.0791
1000+
$1.0682
1500+
$1.0573
2000+
$1.0464
2500+
$1.0355
Exquisite packaging
Discount
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Discover high-performance 2SK3635-Z-E1-AZ from Renesas Electronics America Inc, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, 2SK3635-Z-E1-AZ delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3Z)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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