IPD640N06LGBTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 18A TO252-3
$0.35
Available to order
Reference Price (USD)
1+
$0.35460
500+
$0.351054
1000+
$0.347508
1500+
$0.343962
2000+
$0.340416
2500+
$0.33687
Exquisite packaging
Discount
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Enhance your circuit performance with IPD640N06LGBTMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPD640N06LGBTMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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