RSR010N10HZGTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 100V 1A TSMT3
$0.75
Available to order
Reference Price (USD)
1+
$0.75000
500+
$0.7425
1000+
$0.735
1500+
$0.7275
2000+
$0.72
2500+
$0.7125
Exquisite packaging
Discount
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Experience the power of RSR010N10HZGTL, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RSR010N10HZGTL is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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