Shopping cart

Subtotal: $0.00

IXFX40N90P

IXYS
IXFX40N90P Preview
IXYS
MOSFET N-CH 900V 40A PLUS247-3
$27.03
Available to order
Reference Price (USD)
30+
$16.92767
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3 Variant

Related Products

Toshiba Semiconductor and Storage

SSM3K56ACT,L3F

Rohm Semiconductor

RQ1E075XNTCR

Nexperia USA Inc.

BUK9Y4R4-40E,115

Infineon Technologies

IPN60R360P7SATMA1

Infineon Technologies

IPW80R360P7XKSA1

PN Junction Semiconductor

P3M171K0T3

Infineon Technologies

BSC360N15NS3GATMA1

Top