IPP60R022S7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 23A TO220-3
$18.10
Available to order
Reference Price (USD)
1+
$18.10000
500+
$17.919
1000+
$17.738
1500+
$17.557
2000+
$17.376
2500+
$17.195
Exquisite packaging
Discount
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Experience the power of IPP60R022S7XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPP60R022S7XKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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