SIHG15N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 15A TO247AC
$3.48
Available to order
Reference Price (USD)
1+
$3.67000
10+
$3.28100
100+
$2.69020
500+
$2.17842
1,000+
$1.83722
2,500+
$1.74536
5,000+
$1.67974
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SIHG15N60E-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Rohm Semiconductor
R6024VNX3C16
Texas Instruments
CSD16325Q5
Vishay Siliconix
SI3458BDV-T1-BE3
Infineon Technologies
IPL65R1K5C6SATMA1
onsemi
NTDV20N06LT4G-VF01
Texas Instruments
CSD13380F3
IXYS
IXFR4N100Q
onsemi
FQB33N10TM
Renesas Electronics America Inc
2SK2512-AZ
Panjit International Inc.