ISZ0702NLSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 17A/86A TSDSON
$1.48
Available to order
Reference Price (USD)
1+
$1.48000
500+
$1.4652
1000+
$1.4504
1500+
$1.4356
2000+
$1.4208
2500+
$1.406
Exquisite packaging
Discount
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Optimize your electronic systems with ISZ0702NLSATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, ISZ0702NLSATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-25
- Package / Case: 8-PowerTDFN
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