IST006N04NM6AUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 58A/475A HSOF-5
$4.23
Available to order
Reference Price (USD)
1+
$4.23000
500+
$4.1877
1000+
$4.1454
1500+
$4.1031
2000+
$4.0608
2500+
$4.0185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IST006N04NM6AUMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IST006N04NM6AUMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
Related Products
Rectron USA
RM8N700T2
onsemi
FDMC8882
Toshiba Semiconductor and Storage
2SJ168TE85LF
Infineon Technologies
IRF6795MTRPBF
IXYS
IXTP15P15T
Vishay Siliconix
IRFI630GPBF
Infineon Technologies
IRF9321TRPBF
STMicroelectronics
STH275N8F7-2AG
Nexperia USA Inc.
BUK7907-55ATE127
Motorola