IRLR3636TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 50A DPAK
$2.24
Available to order
Reference Price (USD)
1+
$2.24000
500+
$2.2176
1000+
$2.1952
1500+
$2.1728
2000+
$2.1504
2500+
$2.128
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRLR3636TRPBF by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRLR3636TRPBF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 143W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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