EPC2071
EPC
EPC
TRANS GAN 100V .0022OHM 21BMPD
$7.23
Available to order
Reference Price (USD)
1+
$7.23000
500+
$7.1577
1000+
$7.0854
1500+
$7.0131
2000+
$6.9408
2500+
$6.8685
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose EPC2071 by EPC. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with EPC2071 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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