IRFP4668PBFXKMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO247-3
$10.40
Available to order
Reference Price (USD)
1+
$10.40000
500+
$10.296
1000+
$10.192
1500+
$10.088
2000+
$9.984
2500+
$9.88
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IRFP4668PBFXKMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IRFP4668PBFXKMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 520W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
IXYS
IXTA140P05T-TRL
Diodes Incorporated
DMT6007LFGQ-13
IXYS
IXTK3N250L
Fairchild Semiconductor
FDZ451PZ
Goford Semiconductor
GT060N04D3
Infineon Technologies
IQE050N08NM5CGATMA1
Rohm Semiconductor
BSM180C12P3C202
Harris Corporation
RFP8N18L
Diodes Incorporated
DMNH4011SPS-13
Toshiba Semiconductor and Storage