BSM180C12P3C202
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 180A MODULE
$590.40
Available to order
Reference Price (USD)
1+
$590.40000
500+
$584.496
1000+
$578.592
1500+
$572.688
2000+
$566.784
2500+
$560.88
Exquisite packaging
Discount
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BSM180C12P3C202 by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSM180C12P3C202 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 880W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
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